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= 0 – Use the system version of the name of the user or the name of the user’s primary group
= 1 – Change the user name to the value of the environment variable USER
= 2 – Change the primary group name to the value of the environment variable GROUPNAME
= 3 – Change the user name to the USER environment variable
= 4 – Change the primary group name to the GROUPNAME environment variable
= 5 – Change the user name to the name of the file currently being executed (as an absolute path)
= 6 – Change the user name to the USER environment variable (taking precedence over the FILEPATH environment variable)
= 7 – Change the primary group name to the GROUPNAME environment variable (taking precedence over the FILEPATH environment variable)
= 8 – Change the user name to the name of the process executing a script (as an absolute path)
= 9 – Change the user name to the USER environment variable (taking precedence over the script name environment variable)
= 10 – Change the primary group name to the GROUPNAME environment variable (taking precedence over the script name environment variable)
= 11 – Change the user name to the name of the file currently being executed (as a path relative to the working directory)
= 12 – Change the user name to the USER environment variable (taking precedence over the FILEPATH environment variable)
= 13 – Change the primary group name to the GROUPNAME environment variable (taking precedence over the FILEPATH environment variable)
= 14 – Change the user name to the name of the process executing a script (as a path relative to the working directory)
= 15 – Change the user name to the USER environment variable (taking precedence over the script name environment variable)
= 16 – Change the primary group name to the GROUPNAME environment variable (taking precedence over the script name environment variable)
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(Google translation from the original text)

A:

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1. Technical Field
The present invention relates to a semiconductor device, an electro-optical device, and an electronic apparatus.
2. Related Art
A technique for manufacturing a thin film transistor (hereinafter referred to as a TFT) is disclosed in JP-A-2005-185326. In the technique disclosed in JP-A-2005-185326, first, a first insulation layer, a first conductive layer, and a second insulation layer are stacked on a substrate, and then, the first insulation layer and the second insulation layer are etched to form an opening. Then, a channel layer is formed on the inner wall surface of the opening, and then, the first conductive layer is etched to a predetermined depth from the second insulation layer by using the channel layer as a stopper layer. Further, in the technique, the second insulation layer is etched and removed to expose the surface of the first conductive layer. Thereby, the TFT having an LDD (Lightly Doped Drain) structure is formed.
In the related art, it is difficult to completely remove the first insulation layer, the first conductive layer, and the second insulation layer. As a result, in the related art, when the second insulation layer is etched and removed to expose the surface of the first conductive layer, the first insulation layer is also etched and removed. At this time, if the first insulation layer is completely etched and removed, the channel layer remains in the second insulation layer.
When the channel layer remains in the second insulation layer, the channel layer becomes a leakage path of a channel current. Therefore, there has been a problem in that the TFT cannot be formed by the related art.Q:

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